FDD044AN03L
- Mfr.Part #
- FDD044AN03L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A/35A TO252AA
- Stock
- 4,060
- In Stock :
- 4,060
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- PowerTrench®
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 35A Tc
- Drain to Source Voltage (Vdss) :
- 30V
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- Unknown
- DS Breakdown Voltage-Min :
- 30V
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 5.16pF @ 15V
- Terminal Finish :
- MATTE TIN
- Drain Current-Max (Abs) (ID) :
- 21A
- Power Dissipation-Max :
- 160W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 35A, 10V
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDD044AN03L

N-Channel Tape & Reel (TR) 3.9m Ω @ 35A, 10V ±20V 5.16pF @ 15V 118nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD044AN03L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.16pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 21A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
FDD044AN03L Features
the avalanche energy rating (Eas) is 690 mJ
a 30V drain to source voltage (Vdss)
FDD044AN03L Applications
There are a lot of Rochester Electronics, LLC
FDD044AN03L applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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