FDD044AN03L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

21A

Avalanche Energy Rating (Eas) :

690 mJ

Current - Continuous Drain (Id) @ 25°C :

21A Ta 35A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Qualification Status :

COMMERCIAL

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

160W Tc

Input Capacitance (Ciss) (Max) @ Vds :

5.16pF @ 15V

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 35A, 10V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Reach Compliance Code :

Unknown

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0044Ohm

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Series :

PowerTrench®

Peak Reflow Temperature (Cel) :

260