FDD050N03B

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

72 mJ

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Weight :

260.37mg

Number of Terminations :

2

Number of Pins :

3

Height :

2.39mm

Width :

6.22mm

Drain Current-Max (Abs) (ID) :

50A

Element Configuration :

Single

Published :

2004

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

16V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Rise Time :

4.5ns

Factory Lead Time :

10 Weeks

Power Dissipation :

65W

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5m Ω @ 25A, 10V

Series :

PowerTrench®

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

4.5 ns

Continuous Drain Current (ID) :

90A

Input Capacitance (Ciss) (Max) @ Vds :

2875pF @ 15V

Length :

6.73mm

Power Dissipation-Max :

65W Tc

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.005ohm

Turn-Off Delay Time :

30 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

14.5 ns

Vgs (Max) :

±16V