FDD050N03B
- Mfr.Part #
- FDD050N03B
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 50A DPAK
- Stock
- 42,904
- In Stock :
- 42,904
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Surface Mount
- Rise Time :
- 4.5ns
- Avalanche Energy Rating (Eas) :
- 72 mJ
- Drain to Source Breakdown Voltage :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2875pF @ 15V
- Turn-Off Delay Time :
- 30 ns
- Width :
- 6.22mm
- Pbfree Code :
- yes
- Number of Terminations :
- 2
- Radiation Hardening :
- No
- Height :
- 2.39mm
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 14.5 ns
- Drain Current-Max (Abs) (ID) :
- 50A
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Length :
- 6.73mm
- Element Configuration :
- Single
- Power Dissipation-Max :
- 65W Tc
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 90A
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±16V
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- Gate to Source Voltage (Vgs) :
- 16V
- Published :
- 2004
- Drain-source On Resistance-Max :
- 0.005ohm
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Fall Time (Typ) :
- 4.5 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 65W
- Weight :
- 260.37mg
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- FDD050N03B

N-Channel Tape & Reel (TR) 5m Ω @ 25A, 10V ±16V 2875pF @ 15V 43nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD050N03B Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 72 mJ.The maximum input capacitance of this device is 2875pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 50A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 30 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 14.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
FDD050N03B Features
the avalanche energy rating (Eas) is 72 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 30 ns
FDD050N03B Applications
There are a lot of ON Semiconductor
FDD050N03B applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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