FDB5800

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Power Dissipation-Max :

242W Tc

Height :

4.83mm

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Turn-Off Delay Time :

27.1 ns

Pbfree Code :

yes

Published :

2017

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

6625pF @ 15V

Factory Lead Time :

8 Weeks

Weight :

1.31247g

Threshold Voltage :

1V

Rise Time :

22ns

Current - Continuous Drain (Id) @ 25°C :

14A Ta 80A Tc

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

652 mJ

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

6m Ω @ 80A, 10V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Width :

11.33mm

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

12.1 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.67mm

Contact Plating :

Tin

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

242W

FET Type :

N-Channel

Continuous Drain Current (ID) :

80A

Turn On Delay Time :

20.3 ns

Terminal Form :

Gull wing

Lead Free :

Lead Free

Vgs (Max) :

±20V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Resistance :

6mOhm