FDB5800

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Turn On Delay Time :

20.3 ns

Vgs (Max) :

±20V

Resistance :

6mOhm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

yes

Rise Time :

22ns

Continuous Drain Current (ID) :

80A

Published :

2017

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

652 mJ

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

6625pF @ 15V

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Mounting Type :

Surface Mount

Power Dissipation :

242W

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Weight :

1.31247g

Height :

4.83mm

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

14A Ta 80A Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

12.1 ns

Contact Plating :

Tin

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Number of Pins :

3

Turn-Off Delay Time :

27.1 ns

Series :

PowerTrench®

Threshold Voltage :

1V

Element Configuration :

Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Length :

10.67mm

Width :

11.33mm

Rds On (Max) @ Id, Vgs :

6m Ω @ 80A, 10V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

242W Tc

Number of Terminations :

2