FDB5645

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

150A

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

JESD-609 Code :

e3

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0095Ohm

Input Capacitance (Ciss) (Max) @ Vds :

4.468pF @ 30V

Drain to Source Voltage (Vdss) :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

83A

Number of Terminations :

2

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~175°C TJ

DS Breakdown Voltage-Min :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

80A Ta

Reach Compliance Code :

Unknown

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

125W Tc

Surface Mount :

yes

Series :

PowerTrench®

Vgs (Max) :

±20V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 40A, 10V

FET Type :

N-Channel