FDB5645

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

83A

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Operating Temperature :

-65°C~175°C TJ

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

COMMERCIAL

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 40A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Power Dissipation-Max :

125W Tc

Pulsed Drain Current-Max (IDM) :

150A

Drain-source On Resistance-Max :

0.0095Ohm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

DS Breakdown Voltage-Min :

60V

Terminal Form :

Gull wing

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

107nC @ 10V

Number of Elements :

1

Reach Compliance Code :

Unknown

Surface Mount :

yes

Series :

PowerTrench®

Mounting Type :

Surface Mount

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4.468pF @ 30V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2