FDB52N20TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

FET Type :

N-Channel

Voltage - Rated DC :

200V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

208A

Factory Lead Time :

6 Weeks

Width :

10.16mm

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Fall Time (Typ) :

150 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Weight :

1.31247g

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

2520 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

5V

Max Junction Temperature (Tj) :

150°C

Transistor Application :

SWITCHING

Height :

5.08mm

Radiation Hardening :

No

Series :

UniFET™

Lead Free :

Lead Free

Mount :

Surface Mount

Length :

9.98mm

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Rise Time :

160ns

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Current Rating :

52A

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Number of Pins :

3

ECCN Code :

EAR99

Power Dissipation-Max :

357W Tc

Resistance :

49mOhm

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

48 ns

Power Dissipation :

357W

Drain to Source Breakdown Voltage :

200V

Number of Elements :

1

Turn On Delay Time :

53 ns

Rds On (Max) @ Id, Vgs :

49m Ω @ 26A, 10V

Number of Channels :

1

Continuous Drain Current (ID) :

52A

Pbfree Code :

yes

Published :

2005

Vgs (Max) :

±30V

Nominal Vgs :

5 V

Mounting Type :

Surface Mount