FDB52N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Terminations :

2

Height :

5.08mm

Published :

2005

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Rise Time :

160ns

Turn-Off Delay Time :

48 ns

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Transistor Element Material :

SILICON

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Weight :

1.31247g

Voltage - Rated DC :

200V

Power Dissipation-Max :

357W Tc

Factory Lead Time :

6 Weeks

Fall Time (Typ) :

150 ns

Transistor Application :

SWITCHING

Resistance :

49mOhm

Series :

UniFET™

Number of Elements :

1

Max Junction Temperature (Tj) :

150°C

Avalanche Energy Rating (Eas) :

2520 mJ

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

5V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Turn On Delay Time :

53 ns

Length :

9.98mm

Continuous Drain Current (ID) :

52A

Element Configuration :

Single

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Number of Channels :

1

Current Rating :

52A

Terminal Form :

Gull wing

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

49m Ω @ 26A, 10V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Power Dissipation :

357W

Pulsed Drain Current-Max (IDM) :

208A

Width :

10.16mm

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

52A Tc

Nominal Vgs :

5 V