FDA59N30

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Fall Time (Typ) :

200 ns

Pbfree Code :

yes

Continuous Drain Current (ID) :

59A

REACH SVHC :

No SVHC

Factory Lead Time :

7 Weeks

Number of Elements :

1

Power Dissipation-Max :

500W Tc

Drain to Source Breakdown Voltage :

300V

Resistance :

56mOhm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Rise Time :

575ns

Input Capacitance (Ciss) (Max) @ Vds :

4670pF @ 25V

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

ECCN Code :

EAR99

Radiation Hardening :

No

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

56m Ω @ 29.5A, 10V

Lead Free :

Lead Free

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Package / Case :

TO-3P-3, SC-65-3

Number of Pins :

3

Published :

2013

Mounting Type :

Through Hole

Weight :

6.401g

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

FAST SWITCHING

Turn On Delay Time :

140 ns

Transistor Element Material :

SILICON

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

UniFET™

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

5 V

Threshold Voltage :

5V

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Mount :

Through Hole

Power Dissipation :

500W

Turn-Off Delay Time :

120 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V