FDA50N50
- Mfr.Part #
- FDA50N50
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 921
- In Stock :
- 921
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 4.8mm
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 48A
- Mounting Type :
- Through Hole
- Current Rating :
- 48A
- Number of Terminations :
- 3
- Threshold Voltage :
- 5V
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 24A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 17 Weeks
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 225 ns
- Power Dissipation :
- 625W
- Fall Time (Typ) :
- 230 ns
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2013
- Turn On Delay Time :
- 105 ns
- Power Dissipation-Max :
- 625W Tc
- Series :
- UniFET™
- Length :
- 15.6mm
- Voltage - Rated DC :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 137nC @ 10V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 19.9mm
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Rise Time :
- 360ns
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Input Capacitance (Ciss) (Max) @ Vds :
- 6460pF @ 25V
- Package / Case :
- TO-3P-3, SC-65-3
- Weight :
- 6.401g
- Datasheets
- FDA50N50
FDA50N50 Documents

N-Channel Tube 105m Ω @ 24A, 10V ±20V 6460pF @ 25V 137nC @ 10V TO-3P-3, SC-65-3
FDA50N50 Description
N-channel UniFET? MOSFET FDA50N50 belongs to the family of high-voltage MOSFET family provided by ON Semiconductor based on the planar stripe and DMOS technology. It is specifically designed to provide lower on-state resistance, advanced switching performance, and higher avalanche energy strength. Due to its reliable performance, it is well suited for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDA50N50 Features
-
Lower on-state resistance
-
Better switching performance
-
Higher avalanche energy strength
-
Improved dv/dt capability
-
Available in the TO-247-3LD/TO-3PN package
FDA50N50 Applications
-
Lighting
-
LCD/LED/PDP TV
-
AC-DC power supply
-
Uninterruptible power supply
-
Power factor correction (PFC)
-
Flat panel display (FPD) TV power
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| FDA50N50 | onsemi | 921 | MOSFET N-CH 500V 48A TO3PN |
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| FDA59N30 | onsemi | 15,173 | MOSFET N-CH 300V 59A TO3PN |
















