FDA50N50
- Mfr.Part #
- FDA50N50
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 4
- Stock
- 921
- In Stock :
- 921
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 48A
- Height :
- 19.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Published :
- 2013
- Mount :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Package / Case :
- TO-3P-3, SC-65-3
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Current Rating :
- 48A
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 6.401g
- Threshold Voltage :
- 5V
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 137nC @ 10V
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Length :
- 15.6mm
- Fall Time (Typ) :
- 230 ns
- Pbfree Code :
- yes
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 625W Tc
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Power Dissipation :
- 625W
- Width :
- 4.8mm
- Voltage - Rated DC :
- 500V
- Series :
- UniFET™
- Input Capacitance (Ciss) (Max) @ Vds :
- 6460pF @ 25V
- Drain to Source Breakdown Voltage :
- 500V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Rise Time :
- 360ns
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 24A, 10V
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 225 ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 17 Weeks
- Turn On Delay Time :
- 105 ns
- Datasheets
- FDA50N50

N-Channel Tube 105m Ω @ 24A, 10V ±20V 6460pF @ 25V 137nC @ 10V TO-3P-3, SC-65-3
FDA50N50 Description
N-channel UniFET? MOSFET FDA50N50 belongs to the family of high-voltage MOSFET family provided by ON Semiconductor based on the planar stripe and DMOS technology. It is specifically designed to provide lower on-state resistance, advanced switching performance, and higher avalanche energy strength. Due to its reliable performance, it is well suited for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
FDA50N50 Features
-
Lower on-state resistance
-
Better switching performance
-
Higher avalanche energy strength
-
Improved dv/dt capability
-
Available in the TO-247-3LD/TO-3PN package
FDA50N50 Applications
-
Lighting
-
LCD/LED/PDP TV
-
AC-DC power supply
-
Uninterruptible power supply
-
Power factor correction (PFC)
-
Flat panel display (FPD) TV power
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| FDA59N30 | onsemi | 15,173 | MOSFET N-CH 300V 59A TO3PN |
















