FDA50N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

48A

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Weight :

6.401g

Number of Terminations :

3

Threshold Voltage :

5V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

105m Ω @ 24A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

500V

Element Configuration :

Single

Mounting Type :

Through Hole

Radiation Hardening :

No

Number of Pins :

3

Power Dissipation-Max :

625W Tc

Lead Free :

Lead Free

FET Type :

N-Channel

Fall Time (Typ) :

230 ns

Series :

UniFET™

Power Dissipation :

625W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Width :

4.8mm

Rise Time :

360ns

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

JESD-609 Code :

e3

Published :

2013

ECCN Code :

EAR99

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Voltage - Rated DC :

500V

Length :

15.6mm

Turn-Off Delay Time :

225 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6460pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Mount :

Through Hole

Number of Elements :

1

Transistor Application :

SWITCHING

Package / Case :

TO-3P-3, SC-65-3

Turn On Delay Time :

105 ns

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

48A

Factory Lead Time :

17 Weeks

Transistor Element Material :

SILICON

Height :

19.9mm