FDA50N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Height :

19.9mm

Power Dissipation :

625W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

6.401g

Width :

4.8mm

Factory Lead Time :

17 Weeks

Power Dissipation-Max :

625W Tc

Length :

15.6mm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

137nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6460pF @ 25V

Terminal Finish :

Tin (Sn)

Published :

2013

Fall Time (Typ) :

230 ns

Pbfree Code :

yes

ECCN Code :

EAR99

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

48A Tc

JESD-609 Code :

e3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

48A

Voltage - Rated DC :

500V

Turn On Delay Time :

105 ns

Series :

UniFET™

Package / Case :

TO-3P-3, SC-65-3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

360ns

Drain to Source Breakdown Voltage :

500V

Threshold Voltage :

5V

Radiation Hardening :

No

Turn-Off Delay Time :

225 ns

Packaging :

Tube

Number of Elements :

1

Element Configuration :

Single

Number of Terminations :

3

FET Type :

N-Channel

REACH SVHC :

No SVHC

Current Rating :

48A

Rds On (Max) @ Id, Vgs :

105m Ω @ 24A, 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3