FDA59N25

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.049Ohm

Number of Terminations :

3

Additional Feature :

FAST SWITCHING

Fall Time (Typ) :

170 ns

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Turn On Delay Time :

70 ns

Vgs (Max) :

±30V

Series :

UniFET™

JESD-609 Code :

e3

Power Dissipation-Max :

392W Tc

ECCN Code :

EAR99

Rise Time :

480ns

Gate to Source Voltage (Vgs) :

30V

Weight :

6.401g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Nominal Vgs :

5 V

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Turn-Off Delay Time :

90 ns

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4020pF @ 25V

Continuous Drain Current (ID) :

59A

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

49m Ω @ 29.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Factory Lead Time :

7 Weeks

Mount :

Through Hole

Element Configuration :

Single

Number of Elements :

1

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

250V

Power Dissipation :

392W

Package / Case :

TO-3P-3, SC-65-3

Threshold Voltage :

5V

Radiation Hardening :

No

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

82nC @ 10V

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING