FCP380N60E
- Mfr.Part #
- FCP380N60E
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10.2A TO220-3
- Stock
- 3,012
- In Stock :
- 3,012
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 10.2A Tc
- Published :
- 2012
- Turn-Off Delay Time :
- 64 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.83mm
- Threshold Voltage :
- 2.5V
- Rise Time :
- 9ns
- Height :
- 9.4mm
- Factory Lead Time :
- 12 Weeks
- Length :
- 10.67mm
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 10.2A
- Weight :
- 1.8g
- Power Dissipation-Max :
- 106W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 17 ns
- Number of Pins :
- 3
- Series :
- SuperFET® II
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 10 ns
- Power Dissipation :
- 106W
- Package / Case :
- TO-220-3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Drain to Source Breakdown Voltage :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Datasheets
- FCP380N60E

N-Channel Tube 380m Ω @ 5A, 10V ±20V 1770pF @ 25V 45nC @ 10V TO-220-3
FCP380N60E Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1770pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10.2A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 64 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.2.5V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
FCP380N60E Features
a continuous drain current (ID) of 10.2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 64 ns
a threshold voltage of 2.5V
FCP380N60E Applications
There are a lot of ON Semiconductor
FCP380N60E applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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