FCP36N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Height :

16.51mm

Power Dissipation :

312W

Lead Free :

Lead Free

Power Dissipation-Max :

312W Tc

Transistor Element Material :

SILICON

Number of Terminations :

3

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

36A Tc

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Resistance :

90mOhm

Number of Elements :

1

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Published :

2013

Series :

SupreMOS™

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin (Sn)

Turn-Off Delay Time :

94 ns

Continuous Drain Current (ID) :

36A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Threshold Voltage :

2V

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

600V

Weight :

2.421g

Length :

10.67mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Fall Time (Typ) :

4 ns

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Turn On Delay Time :

23 ns

Input Capacitance (Ciss) (Max) @ Vds :

4785pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

90m Ω @ 18A, 10V

Rise Time :

22ns

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Width :

4.83mm

Mount :

Through Hole

Vgs (Max) :

±30V