FCP36N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

90mOhm

Turn-Off Delay Time :

94 ns

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

Turn On Delay Time :

23 ns

Power Dissipation :

312W

Drain to Source Breakdown Voltage :

600V

JEDEC-95 Code :

TO-220AB

Weight :

2.421g

Radiation Hardening :

No

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Fall Time (Typ) :

4 ns

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

4785pF @ 100V

Package / Case :

TO-220-3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Terminations :

3

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Power Dissipation-Max :

312W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

36A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Length :

10.67mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

90m Ω @ 18A, 10V

Height :

16.51mm

Threshold Voltage :

2V

Width :

4.83mm

Rise Time :

22ns

Number of Pins :

3

Lead Free :

Lead Free

Published :

2013

Number of Elements :

1

Series :

SupreMOS™

Packaging :

Tube