FCP380N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

650V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Packaging :

Tube

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Rise Time :

7ns

Turn On Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

10.2A Tc

Vgs (Max) :

±20V

Height :

9.4mm

Number of Pins :

3

Continuous Drain Current (ID) :

10.2A

Length :

10.67mm

Turn-Off Delay Time :

45 ns

Transistor Application :

SWITCHING

Number of Elements :

1

Width :

4.83mm

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

1665pF @ 25V

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

600V

Weight :

1.8g

Rds On (Max) @ Id, Vgs :

380m Ω @ 5A, 10V

Fall Time (Typ) :

6 ns

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Published :

2010

Number of Terminations :

3

Mounting Type :

Through Hole

JESD-609 Code :

e3

Power Dissipation :

31W

FET Type :

N-Channel

Power Dissipation-Max :

106W Tc

Series :

SuperFET® II

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE