FCH47N60NF
- Mfr.Part #
- FCH47N60NF
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 45.8A TO247-3
- Stock
- 5,336
- In Stock :
- 5,336
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 6.39g
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Avalanche Energy Rating (Eas) :
- 2926 mJ
- Published :
- 2013
- Package / Case :
- TO-247-3
- Length :
- 15.87mm
- Factory Lead Time :
- 15 Weeks
- Threshold Voltage :
- 3V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- SupreMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 6120pF @ 100V
- Rise Time :
- 22ns
- JEDEC-95 Code :
- TO-247AB
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Number of Elements :
- 1
- Fall Time (Typ) :
- 4 ns
- Number of Terminations :
- 3
- Base Part Number :
- FCH47N60
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 45.8A Tc
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.065Ohm
- Height :
- 20.82mm
- Turn-Off Delay Time :
- 117 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 34 ns
- Transistor Element Material :
- SILICON
- Width :
- 4.82mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Radiation Hardening :
- No
- Power Dissipation :
- 368W
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 23.5A, 10V
- Continuous Drain Current (ID) :
- 45.8A
- Power Dissipation-Max :
- 368W Tc
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 600V
- Datasheets
- FCH47N60NF
FCH47N60NF Documents

N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3
FCH47N60NF Description
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.
FCH47N60NF Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 57.5 m
-
Ultra Low Gate Charge (Typ. Qg = 240 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
-
100% Avalanche Tested
-
This Device is Pb?Free and is RoHS Compliant
FCH47N60NF Applications
-
Solar Inverter
-
AC?DC Power Supply
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCH47N60 | onsemi | 10,782 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60 | onsemi | 17,552 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60-F085 | onsemi | 6,513 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60-F133 | onsemi | 1,679 | MOSFET N-CH 600V 47A TO-247 |
| FCH47N60F | onsemi | 5,058 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60F-F085 | onsemi | 16,164 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60F-F133 | onsemi | 8,218 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60N | onsemi | 11,861 | MOSFET N-CH 600V 47A TO247-3 |
















