FCH47N60NF
- Mfr.Part #
- FCH47N60NF
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 45.8A TO247-3
- Stock
- 5,336
- In Stock :
- 5,336
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 368W
- Terminal Finish :
- Tin (Sn)
- Published :
- 2013
- Drain to Source Breakdown Voltage :
- 600V
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 45.8A
- Base Part Number :
- FCH47N60
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 6.39g
- Current - Continuous Drain (Id) @ 25°C :
- 45.8A Tc
- Series :
- SupreMOS™
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Width :
- 4.82mm
- Threshold Voltage :
- 3V
- Power Dissipation-Max :
- 368W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- ECCN Code :
- EAR99
- Height :
- 20.82mm
- Fall Time (Typ) :
- 4 ns
- Transistor Element Material :
- SILICON
- Length :
- 15.87mm
- Packaging :
- Tube
- Number of Terminations :
- 3
- Drain-source On Resistance-Max :
- 0.065Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 6120pF @ 100V
- Avalanche Energy Rating (Eas) :
- 2926 mJ
- Rise Time :
- 22ns
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-247-3
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 23.5A, 10V
- Turn-Off Delay Time :
- 117 ns
- Turn On Delay Time :
- 34 ns
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-247AB
- Mount :
- Through Hole
- Datasheets
- FCH47N60NF

N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3
FCH47N60NF Description
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.
FCH47N60NF Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 57.5 m
-
Ultra Low Gate Charge (Typ. Qg = 240 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
-
100% Avalanche Tested
-
This Device is Pb?Free and is RoHS Compliant
FCH47N60NF Applications
-
Solar Inverter
-
AC?DC Power Supply
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCH47N60 | onsemi | 10,782 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60 | onsemi | 17,552 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60-F085 | onsemi | 6,513 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60-F133 | onsemi | 1,679 | MOSFET N-CH 600V 47A TO-247 |
| FCH47N60F | onsemi | 5,058 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60F-F085 | onsemi | 16,164 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60F-F133 | onsemi | 8,218 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60N | onsemi | 11,861 | MOSFET N-CH 600V 47A TO247-3 |
















