FCH47N60
- Mfr.Part #
- FCH47N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO247-3
- Stock
- 10,782
- In Stock :
- 10,782
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 23.5A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Height :
- 20.82mm
- Published :
- 2013
- Turn On Delay Time :
- 34 ns
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Power Dissipation :
- 368W
- Continuous Drain Current (ID) :
- 45.8A
- Series :
- SupreMOS™
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Base Part Number :
- FCH47N60
- Input Capacitance (Ciss) (Max) @ Vds :
- 6120pF @ 100V
- Number of Pins :
- 3
- Factory Lead Time :
- 15 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Rise Time :
- 22ns
- Weight :
- 6.39g
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 368W Tc
- Fall Time (Typ) :
- 4 ns
- Drain-source On Resistance-Max :
- 0.065Ohm
- Avalanche Energy Rating (Eas) :
- 2926 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 45.8A Tc
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 3V
- Length :
- 15.87mm
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 117 ns
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-247AB
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- 600V
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 4.82mm
- Datasheets
- FCH47N60
FCH47N60 Documents

N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3
FCH47N60NF Description
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.
FCH47N60NF Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 57.5 m
-
Ultra Low Gate Charge (Typ. Qg = 240 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
-
100% Avalanche Tested
-
This Device is Pb?Free and is RoHS Compliant
FCH47N60NF Applications
-
Solar Inverter
-
AC?DC Power Supply
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