FCH47N60
- Mfr.Part #
- FCH47N60
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO247-3
- Stock
- 10,782
- In Stock :
- 10,782
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 45.8A Tc
- Fall Time (Typ) :
- 4 ns
- Height :
- 20.82mm
- Pbfree Code :
- yes
- Base Part Number :
- FCH47N60
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Power Dissipation :
- 368W
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-247AB
- Length :
- 15.87mm
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 45.8A
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Turn-Off Delay Time :
- 117 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 23.5A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.065Ohm
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 6120pF @ 100V
- Drain to Source Breakdown Voltage :
- 600V
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 6.39g
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 34 ns
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin (Sn)
- Width :
- 4.82mm
- Number of Pins :
- 3
- Power Dissipation-Max :
- 368W Tc
- Vgs (Max) :
- ±30V
- Rise Time :
- 22ns
- Threshold Voltage :
- 3V
- Published :
- 2013
- Avalanche Energy Rating (Eas) :
- 2926 mJ
- Series :
- SupreMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Datasheets
- FCH47N60

N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3
FCH47N60NF Description
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.
FCH47N60NF Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 57.5 m
-
Ultra Low Gate Charge (Typ. Qg = 240 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
-
100% Avalanche Tested
-
This Device is Pb?Free and is RoHS Compliant
FCH47N60NF Applications
-
Solar Inverter
-
AC?DC Power Supply
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