FCH47N60N
- Mfr.Part #
- FCH47N60N
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 47A TO247-3
- Stock
- 11,861
- In Stock :
- 11,861
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 15 Weeks
- Length :
- 15.87mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6120pF @ 100V
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-247AB
- Turn-Off Delay Time :
- 117 ns
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 23.5A, 10V
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Height :
- 20.82mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 368W
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 2926 mJ
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 600V
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 34 ns
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Rise Time :
- 22ns
- Number of Elements :
- 1
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 157nC @ 10V
- Threshold Voltage :
- 3V
- Current - Continuous Drain (Id) @ 25°C :
- 45.8A Tc
- Power Dissipation-Max :
- 368W Tc
- REACH SVHC :
- No SVHC
- Width :
- 4.82mm
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- SupreMOS™
- Base Part Number :
- FCH47N60
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.065Ohm
- Weight :
- 6.39g
- Fall Time (Typ) :
- 4 ns
- Continuous Drain Current (ID) :
- 45.8A
- Published :
- 2013
- Transistor Element Material :
- SILICON
- Datasheets
- FCH47N60N
FCH47N60N Documents

N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3
FCH47N60NF Description
The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.
FCH47N60NF Features
-
650 V @ TJ = 150°C
-
Typ. RDS(on) = 57.5 m
-
Ultra Low Gate Charge (Typ. Qg = 240 nC)
-
Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
-
100% Avalanche Tested
-
This Device is Pb?Free and is RoHS Compliant
FCH47N60NF Applications
-
Solar Inverter
-
AC?DC Power Supply
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCH47N60 | onsemi | 10,782 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60 | onsemi | 17,552 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60-F085 | onsemi | 6,513 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60-F133 | onsemi | 1,679 | MOSFET N-CH 600V 47A TO-247 |
| FCH47N60F | onsemi | 5,058 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60F-F085 | onsemi | 16,164 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60F-F133 | onsemi | 8,218 | MOSFET N-CH 600V 47A TO247-3 |
| FCH47N60NF | onsemi | 5,336 | MOSFET N-CH 600V 45.8A TO247-3 |
















