FCH47N60N

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Mfr.Part #
FCH47N60N
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 47A TO247-3
Stock
11,861
In Stock :
11,861

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
157nC @ 10V
Terminal Finish :
Tin (Sn)
Rise Time :
22ns
FET Type :
N-Channel
Base Part Number :
FCH47N60
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-247AB
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
JESD-609 Code :
e3
Number of Terminations :
3
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Series :
SupreMOS™
Length :
15.87mm
Threshold Voltage :
3V
Drain to Source Breakdown Voltage :
600V
Number of Pins :
3
Width :
4.82mm
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
368W Tc
Height :
20.82mm
Fall Time (Typ) :
4 ns
REACH SVHC :
No SVHC
Turn On Delay Time :
34 ns
Drain-source On Resistance-Max :
0.065Ohm
Published :
2013
Packaging :
Tube
Avalanche Energy Rating (Eas) :
2926 mJ
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
15 Weeks
Weight :
6.39g
Number of Elements :
1
Lifecycle Status :
ACTIVE (Last Updated: 23 hours ago)
Package / Case :
TO-247-3
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
45.8A Tc
Element Configuration :
Single
Power Dissipation :
368W
Rds On (Max) @ Id, Vgs :
65m Ω @ 23.5A, 10V
Continuous Drain Current (ID) :
45.8A
Turn-Off Delay Time :
117 ns
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
6120pF @ 100V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
FCH47N60N
Introducing Transistors - FETs, MOSFETs - Single onsemi FCH47N60N from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:FCH47N60, Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, FCH47N60N pinout, FCH47N60N datasheet PDF, FCH47N60N amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCH47N60N ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCH47N60N


N-Channel Tube 65m Ω @ 23.5A, 10V ±30V 6120pF @ 100V 157nC @ 10V TO-247-3

FCH47N60NF Description


The SUPREMOS? MOSFET is the next generation of high voltage superjunction (SJ) technology from ON Semiconductor. It uses a deep trench filling method to set it apart from other SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are provided by this cutting-edge technology and exact process control. For high frequency switching power converter applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications, SUPREMOS MOSFET is appropriate. The enhanced body diode reverse recovery performance of SUPREMOS FRFET? MOSFET allows for component removal and increases system dependability.



FCH47N60NF Features


  • 650 V @ TJ = 150°C

  • Typ. RDS(on) = 57.5 m

  • Ultra Low Gate Charge (Typ. Qg = 240 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)

  • 100% Avalanche Tested

  • This Device is Pb?Free and is RoHS Compliant



FCH47N60NF Applications


  • Solar Inverter

  • AC?DC Power Supply


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