FCH47N60F

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Mfr.Part #
FCH47N60F
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 47A TO247-3
Stock
5,058
In Stock :
5,058

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
8000pF @ 25V
Drain to Source Voltage (Vdss) :
600V
Rds On (Max) @ Id, Vgs :
73m Ω @ 23.5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Base Part Number :
FCH47N60
Published :
2004
Vgs(th) (Max) @ Id :
5V @ 250μA
Packaging :
Tube
FET Type :
N-Channel
Power Dissipation-Max :
417W Tc
Series :
SuperFET™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-247-3
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
47A Tc
Datasheets
FCH47N60F
Introducing Transistors - FETs, MOSFETs - Single onsemi FCH47N60F from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:FCH47N60, Package / Case:TO-247-3, Mounting Type:Through Hole, FCH47N60F pinout, FCH47N60F datasheet PDF, FCH47N60F amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCH47N60F ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCH47N60F


N-Channel Tube 73m Ω @ 23.5A, 10V ±30V 8000pF @ 25V 270nC @ 10V 600V TO-247-3

FCH47N60F Description

SUPERFIT MOSFET is ON Semiconductor?ˉs first generation of high voltage super?junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on?resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance,dv/dt rate, and higher avalanche energy. Consequently, SUPERFIT MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SUPERFIT FRFET MOSFET?ˉs optimized body diode reverse recovery performance can remove additional components and improve system reliability.



FCH47N60F Features 

650 V @ TJ = 150??C

Typ. RDS(on) = 58 m

Ultra Low Gate Charge (Typ. Qg = 210 nC)

Low Effective Output Capacitance (Typ. Cosseff. = 420 pF)

100% Avalanche Tested

These Devices are Pb?Free and are RoHS Compliant



FCH47N60F Applications

Solar Inverter

AC?DC Power Supply




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