EMZ51T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2016

Package / Case :

SOT-563, SOT-666

Mount :

Surface Mount

Number of Terminations :

6

Max Collector Current :

200mA

Collector Emitter Breakdown Voltage :

20V

JESD-30 Code :

R-PDSO-F6

Number of Elements :

2

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

300mV

Packaging :

Cut Tape (CT)

Configuration :

SEPARATE, 2 ELEMENTS

Transistor Type :

NPN, PNP

Polarity/Channel Type :

NPN AND PNP

Current - Collector Cutoff (Max) :

100nA ICBO

Transition Frequency :

400MHz

Max Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Power - Max :

150mW

Vce Saturation (Max) @ Ib, Ic :

300mV @ 10mA, 100mA

Mounting Type :

Surface Mount

Terminal Form :

Flat

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Frequency - Transition :

400MHz 350MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual