EMT1DXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Peak Reflow Temperature (Cel) :

260

Collector Base Voltage (VCBO) :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Frequency :

140MHz

Terminal Form :

Flat

Transition Frequency :

140MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Collector Emitter Breakdown Voltage :

60V

Element Configuration :

Dual

Mounting Type :

Surface Mount

Radiation Hardening :

No

Power Dissipation :

500mW

Emitter Base Voltage (VEBO) :

6V

Surface Mount :

yes

Number of Pins :

6

ECCN Code :

EAR99

Voltage - Rated DC :

-60V

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

EMT

Current - Collector Cutoff (Max) :

500nA ICBO

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Factory Lead Time :

2 Weeks

hFE Min :

120

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Collector Emitter Saturation Voltage :

-500mV

RoHS Status :

ROHS3 Compliant

Published :

2005

JESD-609 Code :

e3

Max Power Dissipation :

500mW

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

AMPLIFIER

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Current Rating :

-100mA

Lead Free :

Lead Free

Number of Elements :

2

Polarity :

PNP

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

60V

Package / Case :

SOT-563, SOT-666

Pin Count :

6

Max Collector Current :

100mA

Gain Bandwidth Product :

140MHz

Transistor Type :

2 PNP (Dual)