EMT1DXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pin Count :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Emitter Base Voltage (VEBO) :

6V

Published :

2005

Collector Base Voltage (VCBO) :

50V

Package / Case :

SOT-563, SOT-666

Element Configuration :

Dual

Current Rating :

-100mA

Collector Emitter Saturation Voltage :

-500mV

Voltage - Rated DC :

-60V

Power Dissipation :

500mW

Number of Elements :

2

Transition Frequency :

140MHz

Max Collector Current :

100mA

Max Power Dissipation :

500mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Collector Emitter Voltage (VCEO) :

60V

hFE Min :

120

Gain Bandwidth Product :

140MHz

JESD-609 Code :

e3

Length :

1.7mm

Collector Emitter Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Transistor Type :

2 PNP (Dual)

Polarity :

PNP

Frequency :

140MHz

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Number of Terminations :

6

Height :

600μm

Radiation Hardening :

No

Width :

1.3mm

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

2 Weeks

Current - Collector Cutoff (Max) :

500nA ICBO

Mounting Type :

Surface Mount

Base Part Number :

EMT

Lead Free :

Lead Free