EMT1DXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Package / Case :

SOT-563, SOT-666

Emitter Base Voltage (VEBO) :

6V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

6

Voltage - Rated DC :

-60V

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Collector Base Voltage (VCBO) :

50V

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Transition Frequency :

140MHz

Transistor Element Material :

SILICON

Element Configuration :

Dual

Surface Mount :

yes

Frequency :

140MHz

Collector Emitter Saturation Voltage :

-500mV

Contact Plating :

Tin

Polarity :

PNP

Factory Lead Time :

2 Weeks

Max Power Dissipation :

500mW

Pin Count :

6

Radiation Hardening :

No

Published :

2005

Current Rating :

-100mA

Number of Elements :

2

Power Dissipation :

500mW

Collector Emitter Breakdown Voltage :

60V

Base Part Number :

EMT

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Transistor Type :

2 PNP (Dual)

Current - Collector Cutoff (Max) :

500nA ICBO

Pbfree Code :

yes

hFE Min :

120

Gain Bandwidth Product :

140MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Collector Emitter Voltage (VCEO) :

60V