EMH4T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-55°C

JESD-609 Code :

e2

Mount :

Surface Mount

HTS Code :

8541.21.00.75

Max Breakdown Voltage :

50V

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

Base Part Number :

*MH4

Element Configuration :

Dual

Max Output Current :

100mA

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Power Dissipation :

150mW

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

10

Operating Supply Voltage :

50V

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

100mA

Published :

2008

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

hFE Min :

100

Transistor Type :

2 NPN - Pre-Biased (Dual)

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

500nA ICBO

Terminal Finish :

TIN COPPER

Lead Free :

Lead Free

Current Rating :

100mA

Resistor - Base (R1) :

10k Ω

Number of Elements :

2

Polarity :

NPN, PNP

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

Pin Count :

5

Frequency - Transition :

250MHz

ECCN Code :

EAR99

Number of Terminations :

5

Continuous Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Voltage - Rated DC :

50V

Packaging :

Tape and Reel (TR)

Transition Frequency :

250MHz

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

150mW