EMH4T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

Published :

2008

Transistor Type :

2 NPN - Pre-Biased (Dual)

Package / Case :

SOT-563, SOT-666

Pin Count :

5

Mount :

Surface Mount

Current - Collector Cutoff (Max) :

500nA ICBO

Max Power Dissipation :

150mW

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-F5

Current Rating :

100mA

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Continuous Collector Current :

100mA

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Polarity :

NPN, PNP

Number of Elements :

2

Power Dissipation :

150mW

Max Collector Current :

100mA

Terminal Form :

Flat

Element Configuration :

Dual

Terminal Finish :

TIN COPPER

Collector Emitter Voltage (VCEO) :

50V

JESD-609 Code :

e2

Transition Frequency :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Base Part Number :

*MH4

Transistor Application :

SWITCHING

hFE Min :

100

Operating Supply Voltage :

50V

Voltage - Rated DC :

50V

Max Output Current :

100mA

Lead Free :

Lead Free

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Frequency - Transition :

250MHz

Number of Pins :

6

Radiation Hardening :

No

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

10k Ω