EMH4FHAT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Voltage - Collector Emitter Breakdown (Max) :

50V

Polarity/Channel Type :

NPN

Power - Max :

150mW

Transition Frequency :

250MHz

Current - Collector (Ic) (Max) :

100mA

Number of Elements :

2

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

JESD-30 Code :

R-PDSO-F6

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Packaging :

Tape and Reel (TR)

Power Dissipation-Max (Abs) :

0.15W

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Series :

Automotive, AEC-Q101

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

10k Ω

Package / Case :

SOT-563, SOT-666

Reach Compliance Code :

not_compliant

Current - Collector Cutoff (Max) :

500nA ICBO

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Number of Terminations :

6

Terminal Form :

Flat

Transistor Type :

2 NPN - Pre-Biased (Dual)

Frequency - Transition :

250MHz