EMG4T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Frequency - Transition :

250MHz

ECCN Code :

EAR99

JESD-609 Code :

e2

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Base Part Number :

*MG4

Lead Free :

Lead Free

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Polarity :

NPN

Radiation Hardening :

No

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-SMD (5 Leads), Flat Lead

Mounting Type :

Surface Mount

Number of Terminations :

5

Transistor Application :

SWITCHING

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Resistor - Base (R1) :

10k Ω

hFE Min :

100

Factory Lead Time :

13 Weeks

Terminal Finish :

Tin/Copper (Sn/Cu)

Number of Pins :

5

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Current Rating :

100mA

Transition Frequency :

250MHz

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

5

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Voltage - Rated DC :

50V

Number of Elements :

2

Max Power Dissipation :

150mW