EMG1T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Pins :

5

Current - Collector Cutoff (Max) :

500nA

Power Dissipation :

150mW

Resistor - Emitter Base (R2) :

22k Ω

Current Rating :

30mA

Radiation Hardening :

No

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

2

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

22k Ω

Factory Lead Time :

13 Weeks

Max Collector Current :

100mA

Transistor Type :

2 NPN - Pre-Biased (Dual)

Frequency - Transition :

250MHz

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Min Operating Temperature :

-55°C

Max Operating Temperature :

150°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING

Continuous Collector Current :

100mA

Lead Free :

Lead Free

hFE Min :

56

Max Power Dissipation :

150mW

Published :

2011

RoHS Status :

ROHS3 Compliant

Terminal Finish :

TIN COPPER

Polarity :

NPN

Pin Count :

5

Voltage - Rated DC :

50V

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Pbfree Code :

yes

Base Part Number :

*MG1

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

5

Package / Case :

6-SMD (5 Leads), Flat Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Max Breakdown Voltage :

50V

JESD-609 Code :

e2

Collector Emitter Voltage (VCEO) :

300mV