EMG11T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-50°C

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Pin Count :

5

Packaging :

Tape and Reel (TR)

Terminal Finish :

TIN COPPER

Current Rating :

100mA

Voltage - Rated DC :

50V

Number of Terminations :

5

Continuous Collector Current :

100mA

Number of Elements :

2

Mounting Type :

Surface Mount

Polarity :

NPN

Transistor Type :

2 NPN - Pre-Biased (Dual)

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

2.2k Ω

hFE Min :

80

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 21

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Radiation Hardening :

No

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Emitter Base (R2) :

47k Ω

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2011

Collector Emitter Voltage (VCEO) :

300mV

Max Power Dissipation :

150mW

Number of Pins :

5

Max Breakdown Voltage :

50V

Frequency - Transition :

250MHz

JESD-609 Code :

e2

Package / Case :

6-SMD (5 Leads), Flat Lead

Max Collector Current :

100mA

Base Part Number :

*MG11

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Transistor Application :

SWITCHING

Factory Lead Time :

13 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Transition Frequency :

250MHz

Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

10