EMD5DXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

hFE Min :

80

Terminal Form :

Flat

Current Rating :

100mA

Collector Emitter Voltage (VCEO) :

50V

Polarity :

NPN, PNP

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

10k Ω, 47k Ω

Power Dissipation :

357mW

Pbfree Code :

yes

Number of Pins :

6

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 2.13

Current - Collector Cutoff (Max) :

500nA

Resistor - Base (R1) :

4.7k Ω, 47k Ω

Factory Lead Time :

17 Weeks

Continuous Collector Current :

100mA

ECCN Code :

EAR99

Mount :

Surface Mount

Published :

2010

Max Power Dissipation :

500mW

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

6

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

2

Qualification Status :

Not Qualified

Pin Count :

6

Mounting Type :

Surface Mount

Element Configuration :

Dual

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Halogen Free :

Halogen Free

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V / 20 @ 5mA 10V

Collector Emitter Breakdown Voltage :

50V