EMD59T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

10k Ω

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transistor Application :

SWITCHING

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

47k Ω

Collector Emitter Voltage (VCEO) :

150mV

Transition Frequency :

250MHz

Max Breakdown Voltage :

50V

Package / Case :

SOT-563, SOT-666

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Published :

2013

Transistor Element Material :

SILICON

Number of Elements :

2

Terminal Form :

Flat

Frequency - Transition :

250MHz

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F6

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Max Collector Current :

100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Power - Max :

150mW

Polarity/Channel Type :

NPN AND PNP