EMD59T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Published :

2013

Resistor - Emitter Base (R2) :

47k Ω

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Collector Emitter Voltage (VCEO) :

150mV

Max Power Dissipation :

150mW

Max Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Terminal Form :

Flat

Transistor Application :

SWITCHING

Package / Case :

SOT-563, SOT-666

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Transition Frequency :

250MHz

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Power - Max :

150mW

Resistor - Base (R1) :

10k Ω

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F6

Factory Lead Time :

10 Weeks

Frequency - Transition :

250MHz

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

500nA

Polarity/Channel Type :

NPN AND PNP

Max Collector Current :

100mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Number of Terminations :

6