EMD4T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-55°C

Pbfree Code :

yes

Base Part Number :

*MD4

Time@Peak Reflow Temperature-Max (s) :

10

Max Collector Current :

100mA

Terminal Form :

Flat

Number of Pins :

6

Max Power Dissipation :

150mW

Radiation Hardening :

No

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e2

Package / Case :

SOT-563, SOT-666

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

13 Weeks

Packaging :

Tape and Reel (TR)

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Terminations :

6

Number of Elements :

2

Max Breakdown Voltage :

50V

Element Configuration :

Dual

Resistor - Emitter Base (R2) :

47k Ω

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 300mV @ 250μA, 5mA

RoHS Status :

ROHS3 Compliant

Contact Plating :

Copper, Tin

Collector Emitter Voltage (VCEO) :

300mV

Lead Free :

Lead Free

Published :

2012

Collector Emitter Breakdown Voltage :

50V

Resistor - Base (R1) :

47k Ω, 10k Ω

Mounting Type :

Surface Mount

Frequency - Transition :

250MHz

Transition Frequency :

250MHz

Terminal Finish :

TIN COPPER

Transistor Application :

SWITCHING

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

hFE Min :

68

Max Operating Temperature :

150°C