EMD4DXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Max Power Dissipation :

500mW

Height :

600μm

Voltage - Rated DC :

50V

Length :

1.7mm

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

6V

Number of Pins :

6

Polarity :

NPN, PNP

Peak Reflow Temperature (Cel) :

260

Halogen Free :

Halogen Free

Pbfree Code :

yes

Continuous Collector Current :

100mA

Number of Terminations :

6

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Number of Elements :

2

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

250mV

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Flat

Current - Collector Cutoff (Max) :

500nA

Resistor - Emitter Base (R2) :

47k Ω

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Max Operating Temperature :

150°C

Power Dissipation :

357mW

Resistor - Base (R1) :

47k Ω, 10k Ω

Element Configuration :

Dual

Min Operating Temperature :

-55°C

Package / Case :

SOT-563, SOT-666

Published :

2005

hFE Min :

80

Width :

1.3mm

Current Rating :

100mA

Surface Mount :

yes

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Factory Lead Time :

2 Weeks