EMD29T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

120mW

Pin Count :

6

Published :

2008

Factory Lead Time :

13 Weeks

Min Operating Temperature :

-55°C

Pbfree Code :

yes

Max Collector Current :

500mA

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Current - Collector Cutoff (Max) :

500nA

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

12V

Resistor - Emitter Base (R2) :

10k Ω

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Mounting Type :

Surface Mount

Number of Elements :

2

JESD-609 Code :

e2

Base Part Number :

*MD29

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Resistor - Base (R1) :

1k Ω, 10k Ω

Element Configuration :

Dual

Current - Collector (Ic) (Max) :

100mA 500mA

Time@Peak Reflow Temperature-Max (s) :

10

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Voltage (VCEO) :

300mV

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Frequency - Transition :

250MHz 260MHz

Terminal Form :

Flat

Terminal Finish :

TIN COPPER

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

12V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 140 @ 100mA 2V

Polarity :

NPN, PNP

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Transition Frequency :

250MHz

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 300mV @ 5mA, 100mA