EMD29T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Polarity :

NPN, PNP

Factory Lead Time :

13 Weeks

Base Part Number :

*MD29

Max Power Dissipation :

120mW

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 140 @ 100mA 2V

Max Breakdown Voltage :

12V

Max Collector Current :

500mA

Time@Peak Reflow Temperature-Max (s) :

10

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Voltage - Collector Emitter Breakdown (Max) :

50V 12V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA / 300mV @ 5mA, 100mA

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e2

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

1k Ω, 10k Ω

Package / Case :

SOT-563, SOT-666

Collector Emitter Voltage (VCEO) :

300mV

Collector Emitter Breakdown Voltage :

12V

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Published :

2008

Transition Frequency :

250MHz

Number of Pins :

6

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

100mA 500mA

Pbfree Code :

yes

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10k Ω

Element Configuration :

Dual

Terminal Finish :

TIN COPPER

Mount :

Surface Mount

Max Operating Temperature :

150°C

Frequency - Transition :

250MHz 260MHz

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)