EMD22T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Terminations :

6

Max Power Dissipation :

150mW

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

10

Resistor - Emitter Base (R2) :

47k Ω

Max Collector Current :

100mA

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Terminal Finish :

TIN COPPER

Current Rating :

100mA

Operating Supply Voltage :

50V

ECCN Code :

EAR99

Frequency - Transition :

250MHz

Continuous Collector Current :

100mA

Package / Case :

SOT-563, SOT-666

Transition Frequency :

250MHz

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

JESD-609 Code :

e2

Terminal Form :

Flat

Element Configuration :

Dual

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Max Output Current :

100mA

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

4.7k Ω

Factory Lead Time :

13 Weeks

Lead Free :

Lead Free

hFE Min :

80

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250μA, 2.5mA

Collector Emitter Voltage (VCEO) :

300mV

Polarity :

NPN, PNP

Pin Count :

6

Min Operating Temperature :

-55°C

Base Part Number :

*MD22

Max Breakdown Voltage :

50V

HTS Code :

8541.21.00.75

Published :

2009

Power Dissipation :

150mW