EMB4T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

50V

Radiation Hardening :

No

Max Power Dissipation :

150mW

Factory Lead Time :

13 Weeks

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e2

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Breakdown Voltage :

50V

Published :

2001

Element Configuration :

Dual

Base Part Number :

MB4

Current Rating :

-100mA

Terminal Form :

Flat

Number of Terminations :

6

Mounting Type :

Surface Mount

Transistor Type :

2 PNP - Pre-Biased (Dual)

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Voltage - Rated DC :

-50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Collector Emitter Voltage (VCEO) :

50V

Mount :

Surface Mount

ECCN Code :

EAR99

Terminal Finish :

TIN COPPER

Transition Frequency :

250MHz

Number of Elements :

2

HTS Code :

8541.21.00.75

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Base (R1) :

10k Ω

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

Pbfree Code :

yes

hFE Min :

100

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Pin Count :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Frequency - Transition :

250MHz