EMB4T2R
- Mfr.Part #
- EMB4T2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS 2PNP PREBIAS 0.15W EMT6
- Stock
- 8,000
- In Stock :
- 8,000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Pin Count :
- 6
- Resistor - Base (R1) :
- 10k Ω
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Number of Pins :
- 6
- HTS Code :
- 8541.21.00.75
- Number of Elements :
- 2
- Min Operating Temperature :
- -55°C
- Package / Case :
- SOT-563, SOT-666
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- Max Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 150mW
- hFE Min :
- 100
- Element Configuration :
- Dual
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Factory Lead Time :
- 13 Weeks
- Voltage - Rated DC :
- -50V
- Terminal Finish :
- TIN COPPER
- Current Rating :
- -100mA
- Base Part Number :
- MB4
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Polarity :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Number of Terminations :
- 6
- Frequency - Transition :
- 250MHz
- Max Operating Temperature :
- 150°C
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e2
- Collector Emitter Breakdown Voltage :
- 50V
- Transition Frequency :
- 250MHz
- Datasheets
- EMB4T2R
EMB4T2R Documents

EMB4T2R datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available at
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