EMB2T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Collector Current :

100mA

ECCN Code :

EAR99

Published :

2004

Radiation Hardening :

No

Number of Elements :

2

Max Operating Temperature :

150°C

Factory Lead Time :

13 Weeks

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

Transition Frequency :

250MHz

Voltage - Rated DC :

-50V

Terminal Finish :

Tin/Copper (Sn/Cu)

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.21.00.75

Lead Free :

Lead Free

Power Dissipation :

150mW

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

300mV

hFE Min :

68

Package / Case :

SOT-563, SOT-666

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

Current Rating :

-30mA

JESD-609 Code :

e2

Transistor Application :

SWITCHING

Base Part Number :

MB2

Pin Count :

6

Number of Terminations :

6

Resistor - Emitter Base (R2) :

47k Ω

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Transistor Type :

2 PNP - Pre-Biased (Dual)

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Packaging :

Tape and Reel (TR)

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Frequency - Transition :

250MHz

Terminal Form :

Flat

Continuous Collector Current :

-100mA

Resistor - Base (R1) :

47k Ω

Number of Pins :

6

Max Power Dissipation :

150mW