EMB2FHAT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Transition Frequency :

250MHz

Factory Lead Time :

13 Weeks

Power - Max :

150mW

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Voltage - Collector Emitter Breakdown (Max) :

50V

Transistor Type :

2 PNP - Pre-Biased (Dual)

Package / Case :

SOT-563, SOT-666

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Surface Mount :

yes

JESD-30 Code :

R-PDSO-F6

Packaging :

Tape and Reel (TR)

Resistor - Base (R1) :

47k Ω

Resistor - Emitter Base (R2) :

47k Ω

Current - Collector Cutoff (Max) :

500nA

Series :

Automotive, AEC-Q101

Terminal Form :

Flat

Number of Elements :

2

Power Dissipation-Max (Abs) :

0.15W

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Collector (Ic) (Max) :

100mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

250MHz

ECCN Code :

EAR99

Polarity/Channel Type :

PNP

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0