DXTP5820CFDB-7
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- Mfr.Part #
- DXTP5820CFDB-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 20V 6A 3DFN
- Stock
- 2,750
- In Stock ：
- 2,750
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 690mW
- Current - Collector (Ic) (Max) :
- 6A
- Frequency - Transition :
- 140MHz
- Package / Case :
- 3-UDFN Exposed Pad
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 20V
- Current - Collector Cutoff (Max) :
- 100nA
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 300mA, 6A
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Datasheets
- DXTP5820CFDB-7
PNP -55°C~150°C TJ 100nA 3-UDFN Exposed Pad Tape & Reel (TR) Surface Mount
DXTP5820CFDB-7 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 300mA, 6A.A 20V maximal voltage - Collector Emitter Breakdown is present in the device.
DXTP5820CFDB-7 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
DXTP5820CFDB-7 Applications
There are a lot of Diodes Incorporated
DXTP5820CFDB-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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