DXTP03200BP5-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

200V

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

3.2W

Pin Count :

4

Max Collector Current :

2A

REACH SVHC :

No SVHC

Number of Pins :

3

Polarity/Channel Type :

PNP

Emitter Base Voltage (VEBO) :

7V

Package / Case :

PowerDI™ 5

Number of Terminations :

3

Frequency - Transition :

105MHz

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Collector Base Voltage (VCBO) :

220V

Transistor Type :

PNP

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

50nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

200V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Configuration :

Single

JEDEC-95 Code :

TO-252

Power Dissipation :

3.2W

Published :

2010

Packaging :

Tape and Reel (TR)

Factory Lead Time :

15 Weeks

Pbfree Code :

yes

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1A 5V

Vce Saturation (Max) @ Ib, Ic :

275mV @ 400mA, 2A

ECCN Code :

EAR99

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Max Breakdown Voltage :

200V

Transition Frequency :

105MHz