DXTP03200BP5-13

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Mfr.Part #
DXTP03200BP5-13
Manufacturer
Diodes Incorporated
Package / Case
PowerDI™ 5
Datasheet
Download
Description
TRANS PNP 200V 2A POWERDI5
Stock
4,683
In Stock :
4,683

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
PNP
Polarity/Channel Type :
PNP
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Number of Terminations :
3
Terminal Form :
Flat
Pbfree Code :
yes
REACH SVHC :
No SVHC
Collector Emitter Voltage (VCEO) :
200V
Number of Pins :
3
Package / Case :
PowerDI™ 5
Transition Frequency :
105MHz
Power Dissipation :
3.2W
Max Breakdown Voltage :
200V
Max Power Dissipation :
3.2W
Operating Temperature :
-55°C~150°C TJ
Vce Saturation (Max) @ Ib, Ic :
275mV @ 400mA, 2A
Mount :
Surface Mount
Terminal Finish :
Matte Tin (Sn)
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
220V
Radiation Hardening :
No
JESD-609 Code :
e3
JEDEC-95 Code :
TO-252
Current - Collector Cutoff (Max) :
50nA ICBO
Emitter Base Voltage (VEBO) :
7V
Collector Emitter Breakdown Voltage :
200V
Published :
2010
RoHS Status :
ROHS3 Compliant
Terminal Position :
Dual
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A 5V
Packaging :
Tape and Reel (TR)
Frequency - Transition :
105MHz
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
260
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
4
Mounting Type :
Surface Mount
Factory Lead Time :
15 Weeks
Max Collector Current :
2A
Configuration :
Single
Datasheets
DXTP03200BP5-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DXTP03200BP5-13 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:PowerDI™ 5, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, DXTP03200BP5-13 pinout, DXTP03200BP5-13 datasheet PDF, DXTP03200BP5-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DXTP03200BP5-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DXTP03200BP5-13


PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount

DXTP03200BP5-13 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 275mV @ 400mA, 2A.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 105MHz.The breakdown input voltage is 200V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

DXTP03200BP5-13 Features


the DC current gain for this device is 100 @ 1A 5V
the vce saturation(Max) is 275mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz


DXTP03200BP5-13 Applications


There are a lot of Diodes Incorporated
DXTP03200BP5-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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