DXTP03200BP5-13
- Mfr.Part #
- DXTP03200BP5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A POWERDI5
- Stock
- 4,683
- In Stock :
- 4,683
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 200V
- Number of Pins :
- 3
- Package / Case :
- PowerDI™ 5
- Transition Frequency :
- 105MHz
- Power Dissipation :
- 3.2W
- Max Breakdown Voltage :
- 200V
- Max Power Dissipation :
- 3.2W
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 275mV @ 400mA, 2A
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 220V
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-252
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 7V
- Collector Emitter Breakdown Voltage :
- 200V
- Published :
- 2010
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 105MHz
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 2A
- Configuration :
- Single
- Datasheets
- DXTP03200BP5-13

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXTP03200BP5-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 275mV @ 400mA, 2A.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 105MHz.The breakdown input voltage is 200V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
DXTP03200BP5-13 Features
the DC current gain for this device is 100 @ 1A 5V
the vce saturation(Max) is 275mV @ 400mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 105MHz
DXTP03200BP5-13 Applications
There are a lot of Diodes Incorporated
DXTP03200BP5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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