DXTP58100CFDB-7
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- Mfr.Part #
- DXTP58100CFDB-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A 3DFN
- Stock
- 2,272
- In Stock ：
- 2,272
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 500mA 2V
- Current - Collector (Ic) (Max) :
- 2A
- Power - Max :
- 690mW
- Vce Saturation (Max) @ Ib, Ic :
- 185mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Frequency - Transition :
- 135MHz
- Package / Case :
- 3-UDFN Exposed Pad
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- DXTP58100CFDB-7
PNP -55°C~150°C TJ 100nA 3-UDFN Exposed Pad Tape & Reel (TR) Surface Mount
DXTP58100CFDB-7 Overview
This device has a DC current gain of 160 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 185mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 100VV - Maximum voltage.
DXTP58100CFDB-7 Features
the DC current gain for this device is 160 @ 500mA 2V
the vce saturation(Max) is 185mV @ 200mA, 2A
DXTP58100CFDB-7 Applications
There are a lot of Diodes Incorporated
DXTP58100CFDB-7 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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