DXTP560BP5-13
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- Mfr.Part #
- DXTP560BP5-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- PowerDI™ 5
- Datasheet
- Download
- Description
- TRANS PNP 500V 0.15A POWERDI5
- Stock
- 16,971
- In Stock ：
- 16,971
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 500V
- Power - Max :
- 2.8W
- Transistor Type :
- PNP
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Base Voltage (VCBO) :
- -500V
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 500mV
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -7V
- Collector Emitter Saturation Voltage :
- -200mV
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Continuous Collector Current :
- -150mA
- Factory Lead Time :
- 15 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- yes
- Base Part Number :
- DXTP560
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 150mA
- Max Breakdown Voltage :
- 500V
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2.8W
- Terminal Finish :
- Matte Tin (Sn)
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- PowerDI™ 5
- Terminal Form :
- Flat
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 50mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 10mA, 50mA
- Transition Frequency :
- 60MHz
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 60MHz
- Additional Feature :
- High Reliability
- Datasheets
- DXTP560BP5-13
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP PowerDI™ 5 Tape & Reel (TR) Surface Mount
DXTP560BP5-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 80 @ 50mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 50mA.Continuous collector voltages of -150mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.Parts of this part have transition frequencies of 60MHz.Single BJT transistor can take a breakdown input voltage of 500V volts.During maximum operation, collector current can be as low as 150mA volts.
DXTP560BP5-13 Features
the DC current gain for this device is 80 @ 50mA 10V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
a transition frequency of 60MHz
DXTP560BP5-13 Applications
There are a lot of Diodes Incorporated
DXTP560BP5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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