DXT13003EK-13
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- Mfr.Part #
- DXT13003EK-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 460V 1.5A TO252-3
- Stock
- 2,402
- In Stock ：
- 2,402
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Continuous Collector Current :
- 1.5A
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 250mA, 1A
- Collector Emitter Saturation Voltage :
- 400mV
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Breakdown Voltage :
- 460V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1.5A
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 300mA 2V
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 4MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 400mV
- Mount :
- Surface Mount
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage :
- 460V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 9V
- Published :
- 2014
- Max Power Dissipation :
- 1.6W
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Weight :
- 1.799996g
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transition Frequency :
- 4MHz
- Datasheets
- DXT13003EK-13
NPN -55°C~150°C TJ 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
DXT13003EK-13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 300mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 250mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 1.5A in order to achieve high efficiency.The emitter base voltage can be kept at 9V for high efficiency.The part has a transition frequency of 4MHz.The breakdown input voltage is 460V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
DXT13003EK-13 Features
the DC current gain for this device is 15 @ 300mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
DXT13003EK-13 Applications
There are a lot of Diodes Incorporated
DXT13003EK-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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