DXT13003DK-13
- Mfr.Part #
- DXT13003DK-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 450V 1.5A TO252-3
- Stock
- 7,670
- In Stock :
- 7,670
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- NPN
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 400mV
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 250mA, 1A
- Power - Max :
- 1.6W
- JESD-609 Code :
- e3
- Published :
- 2014
- Emitter Base Voltage (VEBO) :
- 9V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 4MHz
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Breakdown Voltage :
- 450V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 400mV
- Transition Frequency :
- 4MHz
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 16 @ 500mA 2V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 3.9W
- Mount :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 1.5A
- JESD-30 Code :
- R-PSSO-G2
- Max Collector Current :
- 1.5A
- Datasheets
- DXT13003DK-13

NPN -55°C~150°C TJ 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
DXT13003DK-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 250mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 1.5A volts.
DXT13003DK-13 Features
the DC current gain for this device is 16 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
DXT13003DK-13 Applications
There are a lot of Diodes Incorporated
DXT13003DK-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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