DXT13003DK-13

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Mfr.Part #
DXT13003DK-13
Manufacturer
Diodes Incorporated
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 450V 1.5A TO252-3
Stock
7,670
In Stock :
7,670

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Matte Tin (Sn)
Polarity/Channel Type :
NPN
Case Connection :
COLLECTOR
Number of Terminations :
2
Number of Pins :
3
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Terminal Form :
Gull wing
Factory Lead Time :
15 Weeks
Collector Emitter Saturation Voltage :
400mV
RoHS Status :
ROHS3 Compliant
Vce Saturation (Max) @ Ib, Ic :
400mV @ 250mA, 1A
Power - Max :
1.6W
JESD-609 Code :
e3
Published :
2014
Emitter Base Voltage (VEBO) :
9V
Transistor Type :
NPN
Gain Bandwidth Product :
4MHz
Transistor Element Material :
SILICON
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Collector Emitter Breakdown Voltage :
450V
ECCN Code :
EAR99
Collector Emitter Voltage (VCEO) :
400mV
Transition Frequency :
4MHz
Packaging :
Tape and Reel (TR)
Radiation Hardening :
No
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
16 @ 500mA 2V
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
3.9W
Mount :
Surface Mount
Current - Collector (Ic) (Max) :
1.5A
JESD-30 Code :
R-PSSO-G2
Max Collector Current :
1.5A
Datasheets
DXT13003DK-13
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated DXT13003DK-13 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, DXT13003DK-13 pinout, DXT13003DK-13 datasheet PDF, DXT13003DK-13 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated DXT13003DK-13 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DXT13003DK-13


NPN -55°C~150°C TJ 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

DXT13003DK-13 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 250mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 1.5A volts.

DXT13003DK-13 Features


the DC current gain for this device is 16 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


DXT13003DK-13 Applications


There are a lot of Diodes Incorporated
DXT13003DK-13 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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