DXT13003DK-13
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- Mfr.Part #
- DXT13003DK-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 450V 1.5A TO252-3
- Stock
- 7,670
- In Stock ：
- 7,670
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Current - Collector (Ic) (Max) :
- 1.5A
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Max Power Dissipation :
- 3.9W
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 9V
- Collector Emitter Breakdown Voltage :
- 450V
- Published :
- 2014
- Collector Emitter Voltage (VCEO) :
- 400mV
- Terminal Finish :
- Matte Tin (Sn)
- Power - Max :
- 1.6W
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Mount :
- Surface Mount
- Transition Frequency :
- 4MHz
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 250mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 16 @ 500mA 2V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 4MHz
- Max Collector Current :
- 1.5A
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 400mV
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- DXT13003DK-13
NPN -55°C~150°C TJ 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
DXT13003DK-13 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 250mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Parts of this part have transition frequencies of 4MHz.During maximum operation, collector current can be as low as 1.5A volts.
DXT13003DK-13 Features
the DC current gain for this device is 16 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
DXT13003DK-13 Applications
There are a lot of Diodes Incorporated
DXT13003DK-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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