DXT13003DG-13
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- Mfr.Part #
- DXT13003DG-13
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 450V 1.3A SOT223-3
- Stock
- 1,914
- In Stock ：
- 1,914
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 16 @ 500mA 2V
- JESD-609 Code :
- e3
- Number of Terminations :
- 4
- Package / Case :
- TO-261-4, TO-261AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1.3A
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 9V
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 400mV
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- 1.3A
- Gain Bandwidth Product :
- 4MHz
- Transistor Type :
- NPN
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Turn On Time-Max (ton) :
- 3700ns
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 400mV
- Mount :
- Surface Mount
- Factory Lead Time :
- 15 Weeks
- Max Breakdown Voltage :
- 450V
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 4MHz
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PDSO-G4
- Transistor Element Material :
- SILICON
- Published :
- 2014
- Collector Emitter Breakdown Voltage :
- 450V
- Max Power Dissipation :
- 700mW
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 250mA, 1A
- Datasheets
- DXT13003DG-13
DXT13003DG-13 Documents
NPN -55°C~150°C TJ 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
DXT13003DG-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 16 @ 500mA 2V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 250mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 1.3A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.A transition frequency of 4MHz is present in the part.There is a breakdown input voltage of 450V volts that it can take.Collector current can be as low as 1.3A volts at its maximum.
DXT13003DG-13 Features
the DC current gain for this device is 16 @ 500mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
DXT13003DG-13 Applications
There are a lot of Diodes Incorporated
DXT13003DG-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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