DTD513ZETL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

300mV

JESD-609 Code :

e1

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 100mA 2V

Published :

2009

Max Power Dissipation :

150mW

Factory Lead Time :

13 Weeks

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Collector Current :

500mA

Element Configuration :

Single

Pin Count :

3

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 10

Terminal Finish :

TIN SILVER COPPER

Max Collector Current :

500mA

Polarity :

NPN

Frequency - Transition :

260MHz

Radiation Hardening :

No

hFE Min :

140

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

10 k Ω

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Position :

Dual

Package / Case :

SC-75, SOT-416

Transistor Type :

NPN - Pre-Biased

Transition Frequency :

260MHz

Collector Emitter Breakdown Voltage :

12V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

10

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Resistor - Base (R1) :

1 k Ω

Current - Collector Cutoff (Max) :

500nA

Lead Free :

Lead Free