DTC115EUBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

JESD-30 Code :

R-PDSO-F3

Package Shape :

RECTANGULAR

Transistor Type :

NPN - Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Type :

NPN

DC Current Gain-Min (hFE) :

82

Maximum Operating Temperature :

+ 150 C

Package Type :

UMTF

Product Status :

Active

Product Category :

Bipolar Transistors - Pre-Biased

Series :

-

Manufacturer :

Rohm Semiconductor

Packaging :

Tape and Reel

Reach Compliance Code :

Compliant

Brand :

Rohm Semiconductor

Surface Mount :

yes

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0

Terminal Form :

Flat

Polarity/Channel Type :

NPN

Resistor - Emitter Base (R2) :

100 kOhms

RoHS :

Details

Transistor Application :

SWITCHING

Subcategory :

Transistors

Power - Max :

200 mW

Product Type :

BJTs - Bipolar Transistors - Pre-Biased

Continuous Collector Current :

100 mA

Mounting Style :

SMD/SMT

Package / Case :

SC-85

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 5mA, 5V

Collector-Emitter Voltage-Max :

50 V

Number of Terminals :

3

Package :

Digi-Reel?

Voltage - Collector Emitter Breakdown (Max) :

50 V

Output Voltage :

100 mV

Frequency - Transition :

250 MHz

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Transistor Polarity :

NPN

Supplier Device Package :

UMT3F

Typical Resistor Ratio :

1

Configuration :

Single

Emitter-Collector Voltage (Max) :

50(V)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Resistor - Base (R1) :

100 kOhms

Power Dissipation :

0.2(W)

Mounting Type :

Surface Mount

Terminal Position :

Dual

Collector Current (DC) :

0.1(A)

DC Current Gain :

82

Collector Current-Max (IC) :

0.1 A