DTC115EMT2L

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Frequency - Transition :

250MHz

Pbfree Code :

yes

ECCN Code :

EAR99

Published :

2006

HTS Code :

8541.21.00.75

Resistor - Base (R1) :

100 k Ω

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin/Copper (Sn/Cu)

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Max Operating Temperature :

150°C

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Collector Emitter Voltage (VCEO) :

300mV

Element Configuration :

Single

Max Breakdown Voltage :

50V

Pin Count :

3

Transistor Application :

SWITCHING

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Max Power Dissipation :

150mW

hFE Min :

82

Max Collector Current :

20mA

Factory Lead Time :

13 Weeks

Number of Pins :

3

Transistor Type :

NPN - Pre-Biased

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e2

Package / Case :

SOT-723

Voltage - Rated DC :

50V

Terminal Form :

Flat

Collector Emitter Breakdown Voltage :

50V

Resistor - Emitter Base (R2) :

100 k Ω

Power Dissipation :

150mW

Terminal Position :

Dual

Polarity :

NPN

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

500nA

Transition Frequency :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 5mA 5V

Number of Terminations :

3

Number of Elements :

1

Current Rating :

20mA

Continuous Collector Current :

100mA

Base Part Number :

DTC115