DTC115EEBTL

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

100 k Ω

Factory Lead Time :

13 Weeks

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 5mA 5V

Package / Case :

SC-89, SOT-490

Current - Collector Cutoff (Max) :

500nA

Power Dissipation-Max (Abs) :

0.15W

Frequency - Transition :

250MHz

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Transition Frequency :

250MHz

Power - Max :

150mW

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN - Pre-Biased

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Voltage - Collector Emitter Breakdown (Max) :

50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Surface Mount :

yes

Resistor - Emitter Base (R2) :

100 k Ω

JESD-30 Code :

R-PDSO-F3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Elements :

1

Current - Collector (Ic) (Max) :

100mA