DTC115ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Max Power Dissipation :

200mW

Package / Case :

TO-236-3

Terminal Form :

Gull wing

DC Current Gain-Min (hFE) :

82

Pin Count :

3

VCEsat-Max :

0.3 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

300mV

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

NPN

HTS Code :

8541.21.00.75

Transition Frequency :

250MHz

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G3

Published :

2016

Mount :

Surface Mount

Max Collector Current :

100mA

Max Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Factory Lead Time :

7 Weeks

Operating Temperature (Max) :

150°C

Transistor Application :

SWITCHING

ECCN Code :

EAR99