DTC114EM3T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Factory Lead Time :

2 Weeks

Transistor Application :

SWITCHING

Contact Plating :

Tin

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40

Max Breakdown Voltage :

50V

Resistor - Base (R1) :

10 k Ω

Max Operating Temperature :

150°C

Max Output Current :

100mA

Collector Emitter Saturation Voltage :

250mV

Continuous Collector Current :

100mA

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

50V

Surface Mount :

yes

Number of Elements :

1

Polarity :

NPN

Max Power Dissipation :

260mW

hFE Min :

35

Emitter Base Voltage (VEBO) :

6V

Package / Case :

SOT-723

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

10 k Ω

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type :

NPN - Pre-Biased

Height :

550μm

Current Rating :

100mA

Collector Emitter Breakdown Voltage :

50V

Number of Pins :

3

Published :

1997

Operating Supply Voltage :

50V

Width :

850μm

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Terminal Position :

Dual

Min Operating Temperature :

-55°C

Length :

1.25mm

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA

Element Configuration :

Single

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Power Dissipation :

260mW

Lead Free :

Lead Free

DC Current Gain (hFE) (Min) @ Ic, Vce :

35 @ 5mA 10V

Voltage - Rated DC :

50V

Base Part Number :

DTC114